Crystal growth and characterization of advanced materials
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Crystal growth and characterization of advanced materials proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November 30-December 10, 1987 by International School on Crystal Growth and Characterization of Advanced Materials (1987 La Habana, Cuba)

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Published by World Scientific in Singapore, Teaneck, NJ .
Written in English

Subjects:

  • Crystal growth -- Congresses.

Book details:

Edition Notes

Statementeditor, A. N. Christensen ... [ et al.].
ContributionsChristensen, A. N., International Organization of Crystal Growth.
The Physical Object
Paginationxi, 541 p. ;
Number of Pages541
ID Numbers
Open LibraryOL17986112M
ISBN 109971507307

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  Get this from a library! Crystal growth and characterization of advanced materials: proceedings of the International School on Crystal Growth and Characterization of Advanced Materials, La Habana, Cuba, November Decem [A N Christensen; International Organization of Crystal Growth.;] - crystal defects - crystal quality - field of application Introduction to Crystal Growth and Characterization is an ideal textbook written in a form readily accessible to undergraduate and graduate students of crystallography, physics, chemistry, materials science and ://   Crystal Growth and Characterization of Advanced Materials, pp. () No Access. SILICON-MBE AND MICROELECTRONICS intense research activities in materials sciences and solid-state physics have produced highly attractive properties of new materials combinations and systems with reduced dimensionality, which lend itself for a new Advanced Search Citation Search. Search term. Advanced Search Citation Search. Login / Register. Advanced Materials Vol Issue Communication. Crystal Growth and Characterization of the Model High‐Temperature Superconductor HgBa 2 CuO 4+

ISBN: OCLC Number: Notes: "A selection of lectures of the International School on Crystal Growth and Crystallographic Assessment of Industrial Materials, organized by the Commission on Crystal Growth and Characterization of the International Union of Crystallography in Sitges (Spain) May , "--Title page ://   Progress in Crystal Growth and Characterization of Materials is the only review journal on crystal growth and material assessment including novel applications as well as growth and characterization methods, and acts as a rapid publication medium for review articles and conference reports in the field. Emphasis on practical developments and The Czochralski technique is the most important crystal growth method for the industrial production of silicon with the highest perfection and fabrication rate of all crystal materials. This chapter describes the equipment and processing details of the highly developed Czochralski crystal pulling method (Cz). Abstract. This chapter reviews the single crystal growth of Na x CoO 2 family and the superconductivity is obtained by hydration of the compounds Na x CoO 2 yH 2 O. The large crystals of Na x CoO 2 are grown by optical floating zone method. A systematic study of Na-extraction and hydration process in Na x CoO 2 (x = –) and Na x CoO 2 yH 2 O (x = –, y = ) is

The book presents various iron-based superconductors with different structures, such as , , , 11 and , Detailed single crystal growth methods (fluxes, Bridgman, floating zone), the associated procedures and their impact to crystal size and quality are :// Read the latest articles of Progress in Crystal Growth and Characterization of Materials at , Elsevier’s leading platform of peer-reviewed scholarly literature   Crystal Growth and Characterization of Advanced Materials, pp. () No Access Characterization of Semiconductor Crystals and Device Materials by X The growth of bulk crystals of organic salts with large chromophoric has received little attention, despite the importance of crystal quality for both applications and research. Here, the growth of the title compound (DAST), see Figure, is reported and the main results of the linear, nonlinear, and electro‐optical characterization are presented DAST is shown to be of interest for nonlinear